IRFN3710 document number 5586 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v gs gate ? source voltage i d continuous drain current (v gs = 0 , t case = 25c) i d continuous drain current (v gs = 0 , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range t l package mounting surface temperature (for 5 sec) r jc thermal resistance junction to case 20v 45a 30a 180a 125w 1.0w/c 250mj 3.7v/ns ?55 to 150c 300c 1.0c/w mechanical data dimensions in mm (inches)
absolute maximum ratings (t case = 25c unless otherwise stated) smd 1 package (to-276ab) notes 1) pulse test: pulse width 300ms, ? 2% 2) @ v dd = 25v , l 0.64mh , peak i as = 28a ,v gs = 10v, r g = 25 , starting t j = 25c 3) @ i sd 28a , di/dt 390a/ s , v dd 100v , t j 150c n?channel power mosfet features ? hermetically sealed surface mount package ? small footprint ? efficient use of pcb space. ? simple drive requirements ? lightweight ? high packing densities pad 1 ? source pad 2 ? drain pad 3 ? gate note: irf3710smd also available with pins 1 and 3 reversed. v dss 100v i d(cont) 45a r ds(on) 0.028
parameter test conditions min. typ. max. unit IRFN3710 document number 5586 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v gs = 0 i d = 250 a reference to 25c i d = 1ma v gs = 10v i d = 28a v ds = v gs i d = 250 a v ds = 15v i ds = 28a v gs = 0 v ds = 80v t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 28a v ds = 80v i d = 28a v gs = 10v v ds = 80v v dd = 50v v gs = 10v i d = 28a r g = 2.5 i s = 28a t j = 25c v gs = 0 i f = 28a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t amb = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance 1 gate threshold voltage forward transconductance 1 zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge 1 gate ? source charge 1 gate ? drain (?miller?) charge 1 turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery time reverse recovery charge forward turn?on time 100 0.104 0.028 2.0 4.0 20 25 250 100 ?100 2920 700 340 200 28 94 25 86 75 54 45 180 1.3 280 2.0 negligible v v/c v s ( a na pf nc nc ns a v ns c bv dss bv dss t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on static electrical ratings notes 1) pulse test: pulse width 300 s, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics ( )
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